High-frequency InAs QW transistors for future system on chip and RF - Semiconductor Today

Researchers from GLOBALFOUNDRIES, SEMATECH, and Massachusetts Institute of Technology (MIT) have extended their indium arsenide quantum well metal-oxide-semiconductor field-effect transistor (InAs QW MOSFET) technology to some of the highest and most balanced frequency performance yet seen [Dae-Hyun Kim et al, IEEE Electron Device Letters, published online 4 January 2013]. Many of the improvements in the latest work are attributed to the dramatically higher quality interface between dielectrics and III-V semiconductors enabled by atomic layer deposition (ALD) techniques developed in the last few years.

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