02 Apr '13, 5pm

Micron, Samsung, SK Hynix among those signing on to the Hybrid Memory Cube 1.0 spec.

SAN JOSE, Calif. – The Micron-led Hybrid Memory Cube Consortium has issued version 1.0 of its specification for a vertical memory stack with a defined logic-layer interface. Now the group will turn its focus to higher-speed variations of a dynamic random-access memory (DRAM) module stacked using through-silicon vias. In its next-generation spec, the group aims to increase short-reach data rate across modules from the current 10, 12.5 and 15 Gbits/second up to 28 Gbits/s. Speeds for ultra-short reaches within a die will go from 10 Gbits/s today to 15 Gbits/s in the spec, which is expected to be complete by the first quarter of 2014. The HMC group consists of more than 100 companies including Micron’s rivals Samsung and SK Hynix as well as potential customers such as AMD, Cray, Fujitsu, IBM, Marvell, ST Microelectronics and Xilinx. Missing are big potential users including I...

Full article: http://www.eetimes.com/design/memory-design/4410947/Micro...

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