29 Apr '13, 8am

UK funds R&D project on high-thermal-conductivity substrates for GaN electronics - Semiconductor Today

To mitigate the existing thermal device challenges, the aim of the project is innovation and step change in thermal management of AlGaN/GaN HEMT devices by developing novel substrates, in particular (1) high-value substrates that have higher heat extraction capability than high-cost silicon carbide (SiC) substrates commonly used for GaN RF applications, and (2) low-cost substrates that have improved heat extraction capability to gallium nitride on silicon (GaN-on-Si) substrates for more cost-sensitive power electronics markets. The resulting step-change in improvement in heat spreading should improve reliability, circuit efficiency and ease system constraints of GaN electronics, it is reckoned. To enable optimization of thermal substrate properties, key enabling new thermal analysis technologies will be developed.

Full article: http://www.semiconductor-today.com/news_items/2013/APR/EP...

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