27 Sep '13, 4pm

IEDM Set to Stage FinFET vs. FDSOI via @IntelBlogs @ieee_iedm @alexjttwick @CEA_Le…

The advance program for the 2013 International Electron Devices Meeting (IEDM) has been published. Session 9 on advanced CMOS platforms is likely to be one of the highlights. In that session, a speaker from Taiwan Semiconductor Manufacturing Co. Ltd. will provide details on the company's 16nm FinFET CMOS process. This will be immediately followed by a paper on the FDSOI process for the 14nm node. The authors of the FinFET paper all come from TSMC, but the authors of the FDSOI paper come from STMicroelectronics, Soitec, Leti, IBM, Globalfoundries, and Renesas. IEDM, one of the landmark events of the electronic engineering calendar, bridges academic and commercial research in electron-based devices. This year's meeting takes place Dec. 7-9 at the Washington Hilton Hotel. The foundry TSMC will soon ramp up the production of 20nm circuits and has released 16nm design informati...

Full article: http://www.eetimes.com/document.asp?doc_id=1319645

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