29 Nov '11, 11am

Samsung preps 8-Gbit phase-change memory: via @ee_times

LONDON – Samsung Electronics Co. Ltd. is set to re-ignite debate about whether phase-change memory is commercially viable with the presentation of an 8-Gbit, 20-nm device at the 2012 International Solid-State Circuits Conference. The development was not unexpected as Samsung engineers are due to present a 20-nm phase-change random access memory cell at the International Electron Devices Meeting coming up in Washington DC on Dec. 5 to 7, 2011. Nonetheless a 20-nm, 8-Gbit phase-change random access memory is a large jump forward from the previous state of the art. In February at ISSCC 2011 Samsung engineers presented a 1-Gbit phase-change memory implemented in a 58-nm manufacturing process technology equipped with a low-power double-data-rate nonvolatile memory (LPDDR2-N) interface. Samsung – and Micron Technologies Inc. through its acquisition of Numonyx NV – are the only t...

Full article: http://www.eetimes.com/electronics-news/4230958/ISSCC--Sa...

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