31 Dec '13, 4pm

3D Non-Volatile Memory at IEDM 2013: Ron Neale reviews the papers on 3D NV memory matrix isolation that were p...

If resistive memory of any type is able to challenge silicon as the solid state memory of choice at sub 20nm with 3D or stacked matrices, then progress towards that goal will depend on developing a thin-film matrix-isolation device that can act as a “sneak path” blocker. This will be more challenging if the memory element requires bipolar operation. Such was the problem addressed by a number of papers at IEDM 2013. Some solutions presented were either to use a bipolar threshold switch or to find some way of modifying the current carrying capability of a diode to selectively allow current to flow when required. (This solution is even better when the matrix isolation device is integral with the memory switching mechanism.) Of the many papers at IEDM exploring all aspects RRAM/ReRAM challenges, the following two point the way forward.

Full article: http://www.eetimes.com/author.asp?section_id=36&doc_id=13...

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