Rohm to Roll Out 'Full-SiC' Power Module

Rohm to Roll Out 'Full-SiC' Power Module: Rohm Co Ltd will start volume production of a so-called "full-SiC" pow...

Rohm to Roll Out 'Full-SiC' Power Module Mar 24, 2012 08:51 Tadashi Nezu, Nikkei Electronics Rohm Co Ltd will start volume production of a so-called "full-SiC" power module, whose transistor and diode are made by using silicon carbide (SiC), in March 2012. Rohm will be the world's first company that starts volume production of a full-SiC power module, it said. The rated voltage and current of the full-SiC power module are 1,200V and 100A, respectively. It is equipped with two SiC-based schottky barrier diodes (SBDs) and two SiC-based MOSFETs (metal oxide semiconductor field effect transistors). Compared with existing power modules using power devices such as silicon (Si)-based IGBTs (insulated gate bipolar transistors), the full-SiC power module enables to reduce power loss by about 85%. In addition, it is capable of high-speed switching of 100kHz or higher, which is 10 ti...

Full article: http://techon.nikkeibp.co.jp/english/NEWS_EN/20120324/210...