18 Apr '12, 8pm

Thanks for a great article on the thirst for memory! @ee_times @sylviebarak #micron #NAND #Intel

Thanks for a great article on the thirst for memory! @ee_times @sylviebarak #micron #NAND #Intel

SAN JOSE, Calif.--"As long as the insatiable thirst for memory exists, we will always continue to beat Moore's Law," said Ramin Ghodsi, Micron Technology Inc.'s senior director of NAND development, at an award ceremony naming Intel Corp. and Micron's 20-nm NAND flash the Semiconductor of the Year. Intel and Micron were selected by UBM TechInsights in its 10th annual Insight Awards for their joint development project to create 20-nm NAND flash technology, thought to represent a big breakthrough in terms of storage for consumer and compute applications. The high-capacity, multilevel cell (MLC) NAND made on the 20-nm process is already in volume production and is ready to slot straight in to solid-state drives (SSDs),smartphones, tablets, computers, e-book readers and much more besides. Micron and Intel's20-nm MLC NAND flash, manufactured by their IM Flash Technologies joint ...

Full article: http://www.eetimes.com/electronics-news/4371276/Intel--Mi...

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