30 Mar '15, 7am

Intel, Micron unveil new 3D NAND flash memory

Intel, Micron unveil new 3D NAND flash memory

Intel, Micron unveil new 3D NAND flash memory Press release; Jessie Shen, DIGITIMES [Monday 30 March 2015] Intel and Micron have jointly announced the availability of their 3D NAND technology. This new 3D NAND technology, jointly developed by the companies, stacks layers of data storage cells vertically to create storage devices with three times higher capacity than competing NAND technologies. This enables more storage in a smaller space, bringing significant cost savings, lower power usage and higher performance to a range of mobile consumer devices as well as the most demanding enterprise deployments, the companies claimed. One of the most significant aspects of this technology is in the foundational memory cell itself. Intel and Micron chose to use a floating gate cell, a universally utilized design refined through years of high-volume planar flash manufacturing. This ...

Full article: http://www.digitimes.com/news/a20150329PR200.html

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