28 Jun '12, 3pm

8 V n-channel power MOSFET: industry’s lowest RDS(on) to 9.4 mohms at 4.5 V in 2mm footprint

MALVERN, PENNSYLVANIA — June 28, 2012 — Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 8 V n-channel TrenchFET® power MOSFET featuring the industry’s lowest on-resistance for an n-channel device in the thermally enhanced PowerPAK® SC-70 2 mm by 2 mm footprint area. The new SiA436DJ offers an ultra-low on-resistance of 9.4 mΩ at 4.5 V, 10.5 mΩ at 2.5 V, 12.5 mΩ at 1.8 V, 18 mΩ at 1.5 V, and 36 mΩ at 1.2 V. These values are up to 18 % lower than previous generation solutions, and up to 64 % lower than the closest competing n-channel device in the 2-mm by 2-mm footprint area. The SiA436DJ will be used for load switching in portable electronics such as smart phones and tablet PCs, in addition to mobile computing applications. The device’s ultra-compact PowerPAK SC-70 package saves PCB space in these applications, while its low on-resistance translates into low...

Full article: http://www.vishay.com/company/press/releases/2012/120628m...

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