26 Apr '16, 4pm

#flexibleelectronics

#flexibleelectronics

RPARIS—Researchers from the University of Wisconsin Madison have leveraged the high carrier mobility of flexible silicon nanomembranes (NM) with the scalability of nanoimprinting lithography (NIL) to produce thin-film flexible RF transistors capable of operating at 38GHz. According to their simulations, their manufacturing strategy could yield 100 GHz-capable thin flexible RF transistors to be manufactured at low cost and low temperature on large rolls of PET. Their paper "Fast Flexible Transistors with a Nanotrench Structure" published in the journal Scientific Reports details how they overcome the limitations of conventional lithography. Rather than try to dope selectively a silicon substrate to pattern transistors, the researchers indiscriminately doped a whole silicon nanomembrane (created from a silicon-on-insulator (SOI) wafer, hence keeping the superior charge carri...

Full article: http://www.eetimes.com/document.asp?doc_id=1329519

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