31 Oct '17, 10pm
China firms to invest CNY18 billion to develop 19nm DRAM technology
China firms to invest CNY18 billion to develop 19nm DRAM technology Josephine Lien, Taipei; Willis Ke, DIGITIMES [Tuesday 31 October 2017] China-based GigaDevice Semiconductor and Hefei RuiLi Integrated Circuit Manufacture (formerly Hefei ChangXin IC) will team up to develop 19nm DRAM process technology for the production of 12-inch wafers at a total investment of CNY18 billion (US$2.71 billion), a move widely seen to usher in a new stage of competition in China's DRAM market, according to industry sources. The tie-up will enable the two firms to jointly compete against the other two major players in the China DRAM industry, Yangtze Memory Technology under Tsinghua Unigroup, and Fujian Jinhua Integrated Circuit affiliated with Taiwan-based United Microelectronics (UMC), to win the crowns in the fields of DRAM, NOR flash and 2D NAND in China. The collaboration is based on a...