29 Mar '13, 12am

Thermal anneal for improving adhesion of gold-doped graphene to nitride LEDs - Semiconductor Today

Thermal anneal for improving adhesion of gold-doped graphene to nitride LEDs - Semiconductor Today

The team consisted of researchers from Gwangju Institute of Science and Technology, Seoul National University, and Samsung Electronics Co Ltd. Some of the same researchers were involved in research at Gwangju Institute of Science and Technology, Korea Basic Science Institute Jeonju Center, and Seoul National University that previously developed a solution-based gold-doping process to improve the conductivity of graphene TCLs [Boosting transparent conduction in graphene with gold nanoparticles ]. This latter technique was found to suffer from poor adhesion to the underlying gallium nitride (GaN) semiconductor p-contact layer.

Full article: http://www.semiconductor-today.com/news_items/2013/MAR/GI...

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