30 May '13, 9am

Government invests £2m in NXP's GaN R&D centre in Manchester #research #ukplc

Government invests £2m in NXP's GaN R&D centre in Manchester #research #ukplc

Government invests £2m in NXP’s GaN R&D centre in Manchester no comment richard wilson 2013/05/30 UK government is investing £2m in power semiconductor R&D in particular Gallium Nitride (GaN). NXP Semiconductor secured the funding to develop its next generation of power semiconductors using GaN at its facility in Manchester. GaN is being developed as an alternative to traditional silicon in power electronics. The funding is intended to support a private sector investment of over £7.5m. It will support over 400 existing jobs and create up to 100 new positions in a GaN research facility. The funding has been awarded as part of the third round of the Regional Growth Fund and will be used to recruit extra research and development staff, make prototype models, consult the UK’s academics and provide equipment for the development phase “I’m very pleased that money from the Region...

Full article: http://www.electronicsweekly.com/news/research/device-rd/...

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@NXP secures £2m grant to further #GaN research...

newelectronics.co.uk 30 May '13, 9am

The funding has been awarded as part of the third round of the Regional Growth Fund and will be used to recruit extra R&D ...

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