31 May '13, 11am

NXP gears up for GaN production

LONDON – NXP Semiconductors NV (Eindhoven, The Netherlands) has won support funding from the U.K. government for the development of power semiconductors using gallium nitride (GaN) at the company's Hazel Grove wafer fab near Manchester, England. The U.K. government will provide £2 million (about $3 million) to support £7.5 million (about $11.5 million) of investment from NXP. The $14.5 million total funding safeguards more than 400 existing manufacturing jobs and is set to create up to 100 new positions, NXP said. The money will be used to recruit extra R&D staff, assist in the making of prototypes, and provide equipment for the development phase of the GaN power semiconductors, NXP said. NXP is putting its efforts into commercializing 650-V diodes and switches based on a proprietary GaN-on-Si process technology. NXP has stated that it plans to release a portfolio of GaN d...

Full article: http://www.eetimes.com/design/smart-energy-design/4415429...

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Government invests £2m in NXP's GaN R&D centre in Manchester #research #ukplc

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