28 Jul '14, 6pm

Topological Insulators Offer Efficient Solution to Magnetic Memory

Topological Insulators Offer Efficient Solution to Magnetic Memory

Since they were first theorized in 2005 and later experimentally produced in 2007, topological insulators , with their ability to insulate on the inside and conduct on the outside, present a tantalizing new class of materials for electronics applications. The hope has been that they can provide a simple way to manipulate an electron’s spin and further the field of “spintronics .” While it has been proposed that materials like uranium and plutonium can be made to act as topological insulators , most topological insulators are made from alloys of bismuth. In collaborative research led by researchers at Penn State and Cornell University, physicists have used the topological insulator bismuth selenide in combination with a standard ferromagnetic alloy material to create a material that is capable of controlling magnetic memory 10 times as efficiently as other combinations of m...

Full article: http://spectrum.ieee.org/nanoclast/semiconductors/memory/...

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How to Catch a Memory Copycat

spectrum.ieee.org 31 Jul '14, 1pm

In 2008, allegedly, a technician left SanDisk with a particularly good gift for his new employer—proprietary details about...