26 Apr '12, 8am

Winbond shifting specialty DRAM to 46nm, NOR flash to 58nm

Winbond shifting specialty DRAM to 46nm, NOR flash to 58nm Josephine Lien, Taipei; Adam Hwang, DIGITIMES [Thursday 26 April 2012] Winbond Electronics, a Taiwan-based maker of memory products, has been shifting production of specialty DRAM to 46nm process and NOR flash to 58nm, the company told an investors conference on April 25. In first-quarter 2012, 65nm accounted for 56% of its total output, 42% for 90nm, 1% each for 58nm and 46nm, Winbond indicated. Winbond will adjust allocation of foundry capacity at its 12-inch fab with capital expenditure of NT$3.6 billion (US$122 million) in 2012, with monthly capacity for NOR flash to be increased from 15,000 wafers currently to 17,000 wafers, of which 6,000 and 3,000 wafers will be based on 58nm and 46nm technology respectively. Capacity for specialty DRAM will be lowered from 20,000 wafers to 18,000 wafers, of which 9,000 wafe...

Full article: http://www.digitimes.com/news/a20120426PD206.html

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