30 Apr '12, 6am
Article: A modeling approach for power integrity simulation in 3D-IC designs #semIP
Designing reliable three-dimensional (3D) system-on-chips (SoCs) is extremely complex, and critical for the next level of integration in silicon design. In 3D integrated circuit (3D-IC) vertical stacked-die architecture, individual die are connected directly by Through-Silicon-Vias (TSVs) and micro-bumps. Simulation of 3D-ICs for power integrity needs to model the 3D structure, including all the ICs and their TSV interconnects. Some challenges include modeling and integrating third-party application SoCs or memories into the current design framework and performing a complete analysis. This article outlines an approach for concurrent analysis of the 3D-IC power grid, as well as a chip model-based analysis, and how analysis based on a chip macro-model can yield the same results as concurrent full-chip analysis, resulting in significant runtime benefits.