27 Oct '15, 9pm

Want to learn more about #RFSOI? Check out our byline in Microwave Journal! #semiconductor #GLO…

Want to learn more about #RFSOI? Check out our byline in Microwave Journal! #semiconductor #GLO…

RF SOI has enabled the integration of two other critical components of the FEM: LNAs and PAs. The noise figure and gain performance of an LNA is driven by the ft, fmax and gate resistance of the FET. SOI provides a very low capacitance device thereby helping both ft and fmax. Since the early introduction of RF SOI, the Wi-Fi FEM has widely deployed the use of both switches and LNAs integrated on a single IC. With the advent of carrier aggregation in LTE cellular applications, improved LNA performance for both main Tx/Rx and diversity Rx antenna paths is desired. This presents an opportunity for RF SOI to allow the integration of optimized switches and LNAs in the cellular FEM as well. Power amplifiers, on the other hand, need high ft and high breakdown voltages. FET stacking concepts have been demonstrated on high resistivity (HR) substrate RF SOI devices in the literature...

Full article: http://www.microwavejournal.com/articles/25255-rf-soi-rev...

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