25 Dec '15, 2am

福田昭のデバイス通信 ISSCC 2016プレビュー(3): シングルダイの記憶容量が100Gバイトに近づく半導体メモリ https://t.co/hHvNIxhs9q https://t.co/GQgV3guaYV

福田昭のデバイス通信 ISSCC 2016プレビュー(3): シングルダイの記憶容量が100Gバイトに近づく半導体メモリ https://t.co/hHvNIxhs9q https://t.co/GQgV3guaYV

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Full article: http://eetimes.jp/ee/articles/1512/25/news045.html

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LONDON—Samsung is running 28nm fully-depleted silicon-on-insulator (FDSOI) wafers for STMicroelectronics, the developer of...