26 Jul '16, 3pm

Novel wet etch makes better finfets: University of Illinois researchers have developed a way to wet-etch tall...

Novel wet etch makes better finfets: University of Illinois researchers have developed a way to wet-etch tall...

It works for indium phosphide, but not for silicon – yet. The aim was to etch tall fins with vertical sides and few surface blemishes. “We use a technique that gives a much higher aspect ratio, and the sidewalls are nearly 90 degrees, so we can use the whole volume as the conducting channel,” said researcher Yi Song. “One very tall fin channel can achieve the same conduction as several short fin channels, so we save a lot of area by improving the aspect ratio.” The smoothness of the sides is important, he added, since the fins must be overlaid with insulators and metals, and to have consistent performance the interface between semiconductor and insulator needs to be smooth and even. The Illinois technique is metal-assisted chemical etching (‘MacEtch’), in which a metal template applied to the surface acts as an etch resist for a liquid chemical etch. “Typically, finfets ar...

Full article: http://www.electronicsweekly.com/news/research-news/novel...

Tweets