27 Jul '16, 2pm

First low temperature tantalum deposition with fab-level accuracy: Tantalum metal has been deposited with sub...

First low temperature tantalum deposition with fab-level accuracy: Tantalum metal has been deposited with sub...

“This opens up the prospect of using tantalum in layers just a few nanometers thick as the liner for interconnect wiring in the complex geometries of next-generation electronic chips,” said the University, which worked with German chemicals giant BASF on the project. Tantalum has previously been deposited by techniques such as sputtering or with plasma, none of which can uniformly coat complex 3D structures with the tolerance that Wayne State is reporting – better than 0.1nm. “There exists a high demand for strongly-reducing co-reagents capable of enabling atomic layer deposition of electro-positive metal films like tantalum) from metal-organic precursors,” said Joseph Peter Klesko from Wayne State University. “Developing new chemistry, with novel mechanistic approaches for the reduction of these precursors, is critical for the use of these metal films in next-generation d...

Full article: http://www.electronicsweekly.com/news/research-news/first...

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